Difference between revisions of "Silicon Slab Structural Relaxation"

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(PBEsol: Added section for phonons)
(Relaxation Quality Parameters)
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! Total Force (eV/Å/atom)
 
! Total Force (eV/Å/atom)
 
! Cell Pressure (GPa)
 
! Cell Pressure (GPa)
! Resulting Mean &omega;<sub>1</sub> (THz)
+
! Resulting Mean &omega;<sub>1</sub> (cm<sup>-1</sup>)
! Lowest &omega; (THz)
+
! Lowest &omega; (cm<sup>-1</sup>)
 
|-
 
|-
 
|0
 
|0
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| 0.010
 
| 0.010
 
| -0.493665
 
| -0.493665
|
+
| -63.177
 
|-
 
|-
 
|1
 
|1
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| 0.000
 
| 0.000
 
| -0.718166
 
| -0.718166
|
+
| -59.031
 
|-
 
|-
 
|2
 
|2

Revision as of 15:26, 26 August 2021

Diamond

Single Layer

PBEsol

Relaxation Quality Parameters
Step Displacement q (b1, b2, b3) Build-in Factor Total Energy (eV/atom) Total Force (eV/Å/atom) Cell Pressure (GPa) Resulting Mean ω1 (cm-1) Lowest ω (cm-1)
0 - - -90.40389544 6.90e-05 0.010 -0.493665 -63.177
1 -0.526 0.254 0.000 1.0 -90.33443035 4.50e-05 0.000 -0.718166 -59.031
2
Pair Distribution Functions

aPBE = 5.495 Å ; rNN, bulk, PBE = 2.379 Å

Step PDF
0 Si.PBEsol.1 ML.Fd-3m.max7.PDF.png
1 Si.PBEsol.1 ML.Fd-3m.buildin1.PDF.png
2
3
4
Phonon Bands and Density of States
Step Phonons
0
1 Si.PBEsol.1 ML.Fd-3m.buildin1.phonons.png