Difference between revisions of "Silicon Slab Structural Relaxation"

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(Pair Distribution Functions)
(Relaxation Quality Parameters)
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Revision as of 12:31, 19 October 2021

Diamond

Single Layer

PBEsol

Relaxation Quality Parameters
Step Displacement q (b1, b2, b3) Build-in Factor Total Energy (eV/atom) Total Force (eV/Å/atom) Cell Pressure (GPa) Resulting Mean ω1 (cm-1) Lowest ω (cm-1)
0 - - -90.40389544 6.90e-05 0.010 -0.493665 -63.177
1 9 (-0.526 0.254 0.000) 1.0 -90.33443035 4.50e-05 0.000 -0.718166 -59.031
2 3 (-0.001 -0.513 0.000) 1.0 -90.40389384 6.00e-05 -0.000 -0.597389 -64.901
3 9 () 1.0 -90.39834846 4.50e-05 -0.010 -13.822794
Pair Distribution Functions

aPBEsol = 5.495 Å ; rNN, bulk, PBEsol = 2.379 Å

Step PDF
0 Si.PBEsol.1 ML.Fd-3m.max7.PDF.png
1 Si.PBEsol.1 ML.Fd-3m.buildin1.PDF.png
2 Si.PBEsol.1 ML.Fd-3m.buildin2.PDF.png
3 Si.PBEsol.1 ML.Fd-3m.buildin3.PDF.png
4
Phonon Bands and Density of States
Step Phonons
0 Si.PBEsol.1 ML.Fd-3m.max7.buildin0.png
1 Si.PBEsol.1 ML.Fd-3m.buildin1.phonons.png
2 Si.PBEsol.1 ML.Fd-3m.buildin2.phonons.png

Relaxation Procedure

  1. Create slab using copies of bulk structure coordinates
  2. Relax slab using loose total force convergence (~10-3 Ry bohr)
  3. Vary celldm(1) by fixed perentage around loosely relaxed slab and relax each new structure to tighter total force convergence (~10-4 Ry bohr)
  4. Relax the minimum-energy structure from that step to the tightest force convergence (~10-5 Ry bohr)
  5. Vary celldm(3) around the relaxed minimum energy structure and relax the in-plane (x & y) coordinates only
  6. Fit the equation of state to these energies and volumes